SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
Unregistered (unbuffered)

Tillverkare: SAMSUNG
Produktnummer: M378A1K43BB2-CRC
EAN: 5711783840794
Artikelnummer: 1053316
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
SAMSUNG M378A1K43BB2-CRC RAM - 8 GB - DDR4 - 1 x 8 GB - 2400 MHz - 288-pin DIMM - CL17
Tillverkare: SAMSUNG
Produktnummer: M378A1K43BB2-CRC
EAN: 5711783840794
Artikelnummer: 1053316

Tillfälligt slut eller har utgått produkt. Kontakta ev. kundtjänst for ett alternativ


Varen kan pt. ikke skaffes eller er udgået.
Kontakt evt. kundeservice for et alternativ.}
Tillverkare: SAMSUNG
Produktnummer: M378A1K43BB2-CRC
EAN: 5711783840794
Artikelnummer: 1053316

Tillfälligt slut eller har utgått produkt. Kontakta ev. kundtjänst for ett alternativ


Egenskaper

CAS-latens 17
Internminne 8 GB
Minneslayout (moduler x storlek) 1 x 8 GB
Typ av internminne DDR4
Minne klockhastighet 2400 MHz
Komponent för PC/server
Minnets formfaktor 288-pin DIMM
ECC Nej
Buffrad minnestyp Unregistered (unbuffered)
Minnesspänning 1.2 V

Vikt & dimension

Höjd 31,2 mm

Logistikdata

Harmonized System (HS)-kod 84733020

Samsung DDR4 Unbuffered DIMMs (or UDIMMs) are the most common type of memory used on desktop systems. A UDIMM memory module does not contain any buffer or additional hardware register between the memory module and the system's memory controller. UDIMMs also consume much lower power, and have much lower data access latencies than buffered or registered memory. As the semiconductor memory is widely used in current generation computers, DDR4 is considered the industry standard commercial version of DRAM memory. Advancements in semiconductor design, development, and fabrication processes have enabled the development of high-performance DRAM memory. By leveraging the full potential of Samsung DDR4, you can increase computing performance, while consuming less energy.